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AMAT 0200-36118 RTP EDGE RING Origina New In Stock
- Part number：AMAT 0200-36118 RTP EDGE RING
- Warehouse: Spot
- Warranty： 365 days
- Quality: Original module
- Condition： New
- Shipping method: Courier delivery
- Contact person: LI MING
- Contact number: +86 18059884790
- WeChat：18059884790
- E-mail: plc66@qq.com
Product Description
Product: AMAT 0200-36118 RTP EDGE RING – Applied Materials Rapid Thermal Process Edge Ring
Applied Materials 0200-36118 Wafer Edge Ring for Radiance / Vantage RTP Rapid Thermal Processing Chamber
0200-36118 is an original OEM Edge Ring dedicated to AMAT RTP (Rapid Thermal Processing) rapid thermal annealing chambers, mainly matching Radiance / Radiance Plus / Vantage series 200mm wafer rapid thermal equipment. It is the core annular thermal auxiliary component placed around the wafer periphery during high-temperature rapid annealing processes, used to optimize edge temperature uniformity, eliminate wafer edge hot/cold spots, and suppress edge slip dislocation, warpage and process film thickness deviation.
RTP chamber features ultra-fast heating/cooling cycle (room temperature ~1100°C within seconds), this edge ring adopts low thermal expansion matching material to coordinate wafer heat absorption and radiation balance, ensuring intra-wafer temperature uniformity across full wafer surface.
Core Technical Specifications
- OEM Part Number: 0200-36118 | Brand: Applied Materials (AMAT)
- Equipment Platform: Radiance / Vantage RTP Rapid Thermal Processing System
- Applicable Wafer Size: 200mm (8-inch) silicon wafer
- Main Material: High-purity silicon / silicon carbide (SiC) composite base, optional yttria-stabilized zirconia (YSZ) anti-particle coating
- Process Temperature Range: RT ~ 1150°C, compatible with spike anneal, dopant activation, silicidation, oxidation processes
- Thermal Property: Coefficient of thermal expansion (CTE) matched with silicon wafer, low thermal mass for fast thermal response
- Surface Treatment: Precision polished surface, particle-free high-purity finish to reduce contamination risk
- Structure: Single-layer annular ring, inner diameter fits wafer edge, outer diameter matches RTP heater zone layout
- Cleanroom Grade: Class 1 cleanroom manufacturing, packaged under nitrogen purge
- Operating Temperature Cycling: Tolerate thousands of rapid heat-up & quench cycles without deformation/cracking
- Storage & Operation Temp: -10°C ~ +60°C storage; process chamber max 1150°C
- Certifications: SEMI semiconductor material purity standard, factory full dimensional inspection traceability
Main Functional Features
- Temperature equalization: Compensate insufficient radiation heat at wafer edge, eliminate edge temperature drop to improve within-wafer uniformity (WIW uniformity)
- Wafer edge stress reduction: Balance thermal gradient between wafer center and edge, prevent wafer slip, warpage and crystal dislocation during spike annealing
- Process repeatability: Consistent thermal radiation boundary for batch production, stabilize dopant activation rate and thin film thickness distribution at wafer edge
- Low particle generation: High-density ceramic/silicon base with anti-spalling coating, minimize flaking contamination under repeated high-temperature cycling
- High thermal stability: Matched CTE avoids thermal stress cracking; high thermal conductivity ensures fast heat transfer synchronization with wafer
- Direct OEM replacement: 1:1 dimensional matching with RTP chamber wafer support pedestal, no modification required during spare part swap
- Long service life: Optimized thermal cycle resistance, extend mean time between chamber cleaning (MTBC) to reduce fab downtime
- Wide process compatibility: Support ultra-shallow junction spike anneal, poly-Si activation, metal silicide formation, rapid thermal oxidation (RTO)
Application Industries & Processes
- Advanced Logic & Memory Fab: 200mm wafer RTP rapid thermal annealing process chamber core consumable
- Front-End Wafer Fabrication: Ion implantation dopant activation, ultra-shallow junction spike anneal
- Power Device Manufacturing: Power MOSFET / IGBT rapid thermal oxidation and silicide formation
- Semiconductor Foundry: Mass production batch RTP processing to stabilize edge electrical parameter uniformity
- Equipment Maintenance & Retrofit: Consumable spare replacement for aging AMAT Radiance/Vantage RTP chambers
Product Picture
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